Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

Further development of graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study the mobility charge carriers in a specific device. Here, we demonstrate that GFETs can be directly characterized studied using geometrical magnetoresistance (gMR) effect. The method is free from limitations other approaches since it does not require an assumption constant knowledge gate capacitance. Studies few sets wide range transverse magnetic fields indicate gMR effect dominates up to approximately 0.55 T. In higher fields, physical starts contribute. advantages approach allowed us interpret measured dependencies on voltage, i.e., carrier concentration, identify corresponding scattering mechanisms. particular, fairly associated with dominating Coulomb scattering. decrease at concentrations contribution phonon Analysis shows typically 2–3 times than found via commonly used drain resistance model. latter underestimates take interfacial capacitance into account.